Mfr. #:
NE3503M04-A
Description:
RF JFET Transistors Low Noise HJ FET
Lifecycle:
New from this manufacturer.
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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Product: RF JFET
Transistor Polarity: N-Channel
Transistor Type: HFET
Type: GaAs HFET
Technology: GaAs
Package / Case: FTSMM-4 (M04)
Manufacturer: CEL
Brand: CEL
Id - Continuous Drain Current: 70 mA
Forward Transconductance - Min: 55 mS
Vds - Drain-Source Breakdown Voltage: 4 V
Pd - Power Dissipation: 125 mW
Gain: 12 dB
Operating Frequency: 12 GHz
Factory Pack Quantity: 1
NF - Noise Figure: 0.45 dB
Vgs - Gate-Source Breakdown Voltage: - 3 V
Gate-Source Cutoff Voltage: - 0.7 V
Maximum Operating Temperature: + 125 C

More Information

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NE3503M04-A Price & Stock

CEL NE3503M04-A pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyNE3503M04-A-ND---12.3512.3512.352019-11-22T13:52:50Z
North Star MicroNE3503M04-AContact-----2015-05-20T05:52:12Z

Alternate Names

CEL has several brands around the world that may have alternate names for NE3503M04-A due to regional differences or acquisition. NE3503M04-A may also be known as the following names:

  • CALIFORNIA EASTERN LABS
  • California Eastern Laboratories
  • CALIFORNIA EASTERN LAB
  • NEC/CEL
  • CEL CALIFORNIA EASTERN LABS
  • CEL-NEC
  • CEL CALIFORNIA EASTERN LABS (VA)
  • California Eastern Laboratories (CEL)
  • CEL (VA)
  • CALIFORNIA EASTERN LABORATORIE
  • California Eastern Laboratories Inc
  • CEL CALIFORNIA EASTERN LABORATORIES
  • California Eastern Labs (CEL/NEC)

AD5242BRUZ1M distributor

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