MMST5551-7-F - Diodes Incorporated

Mfr. #:
MMST5551-7-F
Description:
Bipolar Transistors - BJT NPN BIPOLAR
Lifecycle:
New from this manufacturer.
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Specifications

RoHS: Y
Subcategory: Transistors
Configuration: Single
Technology: Si
Package / Case: SOT-323-3
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: NPN
Series: MMST5551
Manufacturer: Diodes Incorporated
Brand: Diodes Incorporated
Product Category: Bipolar Transistors - BJT
Product Type: BJTs - Bipolar Transistors
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 300 MHz
DC Current Gain hFE Max: 250
DC Collector/Base Gain hfe Min: 30
Pd - Power Dissipation: 200 mW
Maximum DC Collector Current: 200 mA
Continuous Collector Current: 200 mA
Length: 2.2 mm
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 150 mV
Width: 1.35 mm
Height: 1 mm
Unit Weight: 0.000176 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

More Information

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MMST5551-7-F Price & Stock

Multicomp MMST5551-7-F pricing and available inventory.

Alternate Names

Multicomp has several brands around the world that may have alternate names for MMST5551-7-F due to regional differences or acquisition. MMST5551-7-F may also be known as the following names:

  • MULTICOMP (FORMERLY FROM SPC)
  • MULTICOMP CORPORATION
  • MULTCMP
  • MULTICOMP PRO
  • MULTICOMP FARNELL
  • SPC Technology/ Multicomp
  • MULTICOMP (FORMERLY FROM VOLTREX)
  • MULTICOMP(RoHS)
  • MULTICOMP/OTHER MFR
  • Multicomp [SPC]

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